Reflection coefficient and optical conductivity of gallium nitride GaN
Here we report the reflection coefficient and optical conductivity of gallium
 nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV
 shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was
 observed that the reflect...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2012 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118322 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Reflection coefficient and optical conductivity of gallium nitride GaN / J.O. Akinlami, I.O. Olateju // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 281-284. — Бібліогр.: 22 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSchreiben Sie den ersten Kommentar!