Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons
We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) ×
 × 10¹² cm⁻³
 ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³
 ) grown by the floating-zone technique
 after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature
 depende...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2007 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118342 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons / A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 9-14. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862569403596406784 |
|---|---|
| author | Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. |
| author_facet | Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. |
| citation_txt | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons / A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 9-14. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) ×
× 10¹² cm⁻³
) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³
) grown by the floating-zone technique
after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature
dependences of the effective concentration of carriers have been measured. The
calculation has been carried out in the framework of Gossick's corrected model. It is
shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters,
and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects
(donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by
small doses of neutrons, the change of a charge state of interstitial defects leads to the
annealing of these defects and to a decrease of their introduction rate.
|
| first_indexed | 2025-11-26T01:42:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118342 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T01:42:45Z |
| publishDate | 2007 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. 2017-05-29T19:37:10Z 2017-05-29T19:37:10Z 2007 Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons / A.P. Dolgolenko, M.D. Varentsov, G.P. Gaidar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 9-14. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 61.72.Ji, 61.80.Hg, 61.82.Fk, 71.55.Cn https://nasplib.isofts.kiev.ua/handle/123456789/118342 We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) ×
 × 10¹² cm⁻³
 ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³
 ) grown by the floating-zone technique
 after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature
 dependences of the effective concentration of carriers have been measured. The
 calculation has been carried out in the framework of Gossick's corrected model. It is
 shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters,
 and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects
 (donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by
 small doses of neutrons, the change of a charge state of interstitial defects leads to the
 annealing of these defects and to a decrease of their introduction rate. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons Article published earlier |
| spellingShingle | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons Dolgolenko, A.P. Varentsov, M.D. Gaidar, G.P. Litovchenko, P.G. |
| title | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_full | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_fullStr | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_full_unstemmed | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_short | Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons |
| title_sort | dependence of the defect introduction rate on the dose of irradiation of p-si by fast-pile neutrons |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118342 |
| work_keys_str_mv | AT dolgolenkoap dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons AT varentsovmd dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons AT gaidargp dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons AT litovchenkopg dependenceofthedefectintroductionrateonthedoseofirradiationofpsibyfastpileneutrons |