Influence of complex defects on electrophysical properties of GaP light emitting diodes
In order to estimate the role of complex defects on GaP light emitting diodes
 (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with
 reactor neutrons have been studied. It has been stated that nonradiative levels of radiation
 defects affect...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118369 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of complex defects on electrophysical properties
 of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862566935695196160 |
|---|---|
| author | Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. |
| author_facet | Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. |
| citation_txt | Influence of complex defects on electrophysical properties
 of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In order to estimate the role of complex defects on GaP light emitting diodes
(LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with
reactor neutrons have been studied. It has been stated that nonradiative levels of radiation
defects affect electroluminescence quenching. From the analysis of the tunnel current,
the density of dislocations in the depleted part of the p–n junction was obtained. Neutron
induced disorder regions do not change the tunnel component of the direct current of red
diodes, increasing the dislocation density, because the carrier flow along the “tunnel
shunts” is blocked.
|
| first_indexed | 2025-11-26T00:08:25Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118369 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T00:08:25Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. 2017-05-30T06:02:12Z 2017-05-30T06:02:12Z 2014 Influence of complex defects on electrophysical properties
 of GaP light emitting diodes / O. Konoreva, E. Malyj, S. Mamykin, I. Petrenko, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 184-187. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/118369 In order to estimate the role of complex defects on GaP light emitting diodes
 (LED) operation, luminescent and electrical characteristics of GaP LEDs irradiated with
 reactor neutrons have been studied. It has been stated that nonradiative levels of radiation
 defects affect electroluminescence quenching. From the analysis of the tunnel current,
 the density of dislocations in the depleted part of the p–n junction was obtained. Neutron
 induced disorder regions do not change the tunnel component of the direct current of red
 diodes, increasing the dislocation density, because the carrier flow along the “tunnel
 shunts” is blocked. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of complex defects on electrophysical properties of GaP light emitting diodes Article published earlier |
| spellingShingle | Influence of complex defects on electrophysical properties of GaP light emitting diodes Konoreva, O. Malyj, E. Mamykin, S. Petrenko, I. Pinkovska, M. Tartachnyk, V. |
| title | Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_full | Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_fullStr | Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_full_unstemmed | Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_short | Influence of complex defects on electrophysical properties of GaP light emitting diodes |
| title_sort | influence of complex defects on electrophysical properties of gap light emitting diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118369 |
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