Semiconductor sensors for dosimetry of epithermal neutrons
Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result,...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119067 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Semiconductor sensors for dosimetry of epithermal neutrons / P.G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L.I. Barabash, T.I. Kibkalo, V.F. Lastovetsky, A.P. Litovchenko, M.B. Pinkovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 90-91. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862607100683747328 |
|---|---|
| author | Litovchenko, P.G. Moss, R. Stecher-Rasmussen, F. Appelman, K. Barabash, L.I. Kibkalo, T.I. Lastovetsky, V.F. Litovchenko, A.P. Pinkovska, M.B. |
| author_facet | Litovchenko, P.G. Moss, R. Stecher-Rasmussen, F. Appelman, K. Barabash, L.I. Kibkalo, T.I. Lastovetsky, V.F. Litovchenko, A.P. Pinkovska, M.B. |
| citation_txt | Semiconductor sensors for dosimetry of epithermal neutrons / P.G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L.I. Barabash, T.I. Kibkalo, V.F. Lastovetsky, A.P. Litovchenko, M.B. Pinkovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 90-91. — Бібліогр.: 4 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result, we have obtained considerably more sensitive sensors for more wide range of neutron doses. The sensitivity of sensors is 0.14 V/Gy for average neutron energy of 24 keV.
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| first_indexed | 2025-11-28T13:37:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119067 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T13:37:36Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Litovchenko, P.G. Moss, R. Stecher-Rasmussen, F. Appelman, K. Barabash, L.I. Kibkalo, T.I. Lastovetsky, V.F. Litovchenko, A.P. Pinkovska, M.B. 2017-06-03T04:58:38Z 2017-06-03T04:58:38Z 1999 Semiconductor sensors for dosimetry of epithermal neutrons / P.G. Litovchenko, R. Moss, F. Stecher-Rasmussen, K. Appelman, L.I. Barabash, T.I. Kibkalo, V.F. Lastovetsky, A.P. Litovchenko, M.B. Pinkovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 90-91. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 29.40.Wk https://nasplib.isofts.kiev.ua/handle/123456789/119067 Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result, we have obtained considerably more sensitive sensors for more wide range of neutron doses. The sensitivity of sensors is 0.14 V/Gy for average neutron energy of 24 keV. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor sensors for dosimetry of epithermal neutrons Article published earlier |
| spellingShingle | Semiconductor sensors for dosimetry of epithermal neutrons Litovchenko, P.G. Moss, R. Stecher-Rasmussen, F. Appelman, K. Barabash, L.I. Kibkalo, T.I. Lastovetsky, V.F. Litovchenko, A.P. Pinkovska, M.B. |
| title | Semiconductor sensors for dosimetry of epithermal neutrons |
| title_full | Semiconductor sensors for dosimetry of epithermal neutrons |
| title_fullStr | Semiconductor sensors for dosimetry of epithermal neutrons |
| title_full_unstemmed | Semiconductor sensors for dosimetry of epithermal neutrons |
| title_short | Semiconductor sensors for dosimetry of epithermal neutrons |
| title_sort | semiconductor sensors for dosimetry of epithermal neutrons |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119067 |
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