Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

• Datum: 2008
• Hauptverfasser: Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119072
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ.

In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescent and durability of SiO₂ (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross sections of both electron traps and hole traps were determined. EL quenching at a great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures.