Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
In this paper we explore the electrophysical and electroluminescence (EL)
 properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
 and C⁺
 ions. The implanting fluencies were chosen in such a way that the peak concentration of
 excess Si and...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119072 |
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| Zitieren: | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862573064762425344 |
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| author | Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.N. Rebohle, L. Skorupa, W. |
| author_facet | Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.N. Rebohle, L. Skorupa, W. |
| citation_txt | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this paper we explore the electrophysical and electroluminescence (EL)
properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
and C⁺
ions. The implanting fluencies were chosen in such a way that the peak concentration of
excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on
electroluminescent and durability of SiO₂ (Si,C) - Si-system is studied. Combined
measurements of charge trapping and EL intensity as a function of the injected charge
and current have been carried out with the aim of clarifying the mechanisms of
electroluminescence. EL was demonstrated to have defect-related nature. Cross sections
of both electron traps and hole traps were determined. EL quenching at a great levels of
injected charge is associated with strong negative charge capture, following capture of
positive charge leading to electrical breakdown of SiO₂ structures.
|
| first_indexed | 2025-11-26T06:24:07Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119072 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T06:24:07Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.N. Rebohle, L. Skorupa, W. 2017-06-03T05:04:44Z 2017-06-03T05:04:44Z 2008 Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk , S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy , V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L.Rebohle, W.Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 319-323. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 68.35,78.55 https://nasplib.isofts.kiev.ua/handle/123456789/119072 In this paper we explore the electrophysical and electroluminescence (EL)
 properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
 and C⁺
 ions. The implanting fluencies were chosen in such a way that the peak concentration of
 excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on
 electroluminescent and durability of SiO₂ (Si,C) - Si-system is studied. Combined
 measurements of charge trapping and EL intensity as a function of the injected charge
 and current have been carried out with the aim of clarifying the mechanisms of
 electroluminescence. EL was demonstrated to have defect-related nature. Cross sections
 of both electron traps and hole traps were determined. EL quenching at a great levels of
 injected charge is associated with strong negative charge capture, following capture of
 positive charge leading to electrical breakdown of SiO₂ structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions Article published earlier |
| spellingShingle | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.N. Rebohle, L. Skorupa, W. |
| title | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_full | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_fullStr | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_full_unstemmed | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_short | Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_sort | electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119072 |
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