The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers

The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers

The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output...

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Date:2008
Main Authors: Solntsev, V.S., Gorbanyuk, T.I., Litovchenko, V.G., Evtukh, A.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119080
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ.

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spelling nasplib_isofts_kiev_ua-123456789-1190802025-06-03T16:25:25Z The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitancevoltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena. This work was supported by Science and Technology Centre in Ukraine, Project № 3819, by National Academy of science, Project № 51 and № 25- 2008, by Ministry of Science and Еducation, Project № M175-2007. 2008 Article The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 07.07.Df, 68.43.Bc, 68.47.Fg https://nasplib.isofts.kiev.ua/handle/123456789/119080 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitancevoltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena.
format Article
author Solntsev, V.S.
Gorbanyuk, T.I.
Litovchenko, V.G.
Evtukh, A.A.
spellingShingle Solntsev, V.S.
Gorbanyuk, T.I.
Litovchenko, V.G.
Evtukh, A.A.
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Solntsev, V.S.
Gorbanyuk, T.I.
Litovchenko, V.G.
Evtukh, A.A.
author_sort Solntsev, V.S.
title The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
title_short The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
title_full The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
title_fullStr The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
title_full_unstemmed The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
title_sort influence of h₂s and h₂ adsorption on characteristics of mis structures with si porous layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2008
url https://nasplib.isofts.kiev.ua/handle/123456789/119080
citation_txt The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-11-25T20:35:27Z
last_indexed 2025-11-25T20:35:27Z
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