The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output...
Збережено в:
| Дата: | 2008 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119080 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119080 |
|---|---|
| record_format |
dspace |
| fulltext |
|
| spelling |
nasplib_isofts_kiev_ua-123456789-1190802025-06-03T16:25:25Z The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitancevoltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena. This work was supported by Science and Technology Centre in Ukraine, Project № 3819, by National Academy of science, Project № 51 and № 25- 2008, by Ministry of Science and Еducation, Project № M175-2007. 2008 Article The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 07.07.Df, 68.43.Bc, 68.47.Fg https://nasplib.isofts.kiev.ua/handle/123456789/119080 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The adsorboelectric effect arising in multilayered semiconductor structures
based on the porous Si with catalytically active Pd electrodes due to action of low
concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
studied. The kinetic dependences of the change in output signals of the samples upon
action of different concentrations of gas molecules are studied using the capacitancevoltage
characteristic method. The isotherms of adsorption are derived. A physical model
of the adsorption of hydrogen containing gases in these structures is proposed to explain
the observed phenomena. |
| format |
Article |
| author |
Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. |
| spellingShingle |
Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Solntsev, V.S. Gorbanyuk, T.I. Litovchenko, V.G. Evtukh, A.A. |
| author_sort |
Solntsev, V.S. |
| title |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_short |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_full |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_fullStr |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_full_unstemmed |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers |
| title_sort |
influence of h₂s and h₂ adsorption on characteristics of mis structures with si porous layers |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119080 |
| citation_txt |
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT solntsevvs theinfluenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers AT gorbanyukti theinfluenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers AT litovchenkovg theinfluenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers AT evtukhaa theinfluenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers AT solntsevvs influenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers AT gorbanyukti influenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers AT litovchenkovg influenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers AT evtukhaa influenceofh2sandh2adsorptiononcharacteristicsofmisstructureswithsiporouslayers |
| first_indexed |
2025-11-25T20:35:27Z |
| last_indexed |
2025-11-25T20:35:27Z |
| _version_ |
1849795991749787648 |