The influence of ion implantation by phosphorous on structural changes in porous silicon
Structural changes in the surface layer of technologically treated silicon by ion implantation, chemical etching, and their combined action have been investigated by the X-ray diffractometry methods. The functional and quantitative differences in the thickness dependences of strains, values of maxim...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2004 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119136 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The influence of ion implantation by phosphorous on structural changes in porous silicon / Z. Swiatek, I. Lytvynchuk, I. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 231-235. — Бібліогр.: 17 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineBe the first to leave a comment!