Evidence for photochemical transformations in porous silicon

Evidence for photochemical transformations in porous silicon

The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase rapidly under UV irradiation and to flatten out in several hours. The subseque...

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Datum:1999
Hauptverfasser: Shevchenko, V.B., Makara, V.A., Vakulenko, O.V., Dacenko, O.I., Rudenko, O.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119859
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Evidence for photochemical transformations in porous silicon / V.B. Shevchenko, V.A. Makara, O.V. Vakulenko, O.I. Dacenko, O.V. Rudenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 50-53. — Бібліогр.: 17 назв. — англ.

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spelling nasplib_isofts_kiev_ua-123456789-1198592025-02-09T12:18:03Z Evidence for photochemical transformations in porous silicon Shevchenko, V.B. Makara, V.A. Vakulenko, O.V. Dacenko, O.I. Rudenko, O.V. The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase rapidly under UV irradiation and to flatten out in several hours. The subsequent irradiation leads to intensity degradation, which may be explained by the luminescence fatigue effect. At the same time, the PLI of the unilluminated sample almost does not change during the experiment. It turned out that the anomaly as a small surge down is observed on the PLI evolution curve at the stage of the initial monotonous increase of PLI after a short-time (1 to 2 minutes) interruption of the laser illumination of the sample, whereas this anomaly is a surge up at the stage of the monotonous fall of the PLI curve. In the case of a long-time (tens of hours) discontinuation of illumination, the anomaly was similar for all the portions of the PLI curve. The described results are explained by effect of two competing factors which are the luminescence fatigue and light-induced formation of unstable (molecular) chemical bonds that can transform to the stable atomic ones. 1999 Article Evidence for photochemical transformations in porous silicon / V.B. Shevchenko, V.A. Makara, O.V. Vakulenko, O.I. Dacenko, O.V. Rudenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 50-53. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 78.55.Mb, S5.11 https://nasplib.isofts.kiev.ua/handle/123456789/119859 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase rapidly under UV irradiation and to flatten out in several hours. The subsequent irradiation leads to intensity degradation, which may be explained by the luminescence fatigue effect. At the same time, the PLI of the unilluminated sample almost does not change during the experiment. It turned out that the anomaly as a small surge down is observed on the PLI evolution curve at the stage of the initial monotonous increase of PLI after a short-time (1 to 2 minutes) interruption of the laser illumination of the sample, whereas this anomaly is a surge up at the stage of the monotonous fall of the PLI curve. In the case of a long-time (tens of hours) discontinuation of illumination, the anomaly was similar for all the portions of the PLI curve. The described results are explained by effect of two competing factors which are the luminescence fatigue and light-induced formation of unstable (molecular) chemical bonds that can transform to the stable atomic ones.
format Article
author Shevchenko, V.B.
Makara, V.A.
Vakulenko, O.V.
Dacenko, O.I.
Rudenko, O.V.
spellingShingle Shevchenko, V.B.
Makara, V.A.
Vakulenko, O.V.
Dacenko, O.I.
Rudenko, O.V.
Evidence for photochemical transformations in porous silicon
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Shevchenko, V.B.
Makara, V.A.
Vakulenko, O.V.
Dacenko, O.I.
Rudenko, O.V.
author_sort Shevchenko, V.B.
title Evidence for photochemical transformations in porous silicon
title_short Evidence for photochemical transformations in porous silicon
title_full Evidence for photochemical transformations in porous silicon
title_fullStr Evidence for photochemical transformations in porous silicon
title_full_unstemmed Evidence for photochemical transformations in porous silicon
title_sort evidence for photochemical transformations in porous silicon
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url https://nasplib.isofts.kiev.ua/handle/123456789/119859
citation_txt Evidence for photochemical transformations in porous silicon / V.B. Shevchenko, V.A. Makara, O.V. Vakulenko, O.I. Dacenko, O.V. Rudenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 50-53. — Бібліогр.: 17 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT makarava evidenceforphotochemicaltransformationsinporoussilicon
AT vakulenkoov evidenceforphotochemicaltransformationsinporoussilicon
AT dacenkooi evidenceforphotochemicaltransformationsinporoussilicon
AT rudenkoov evidenceforphotochemicaltransformationsinporoussilicon
first_indexed 2025-11-25T23:28:33Z
last_indexed 2025-11-25T23:28:33Z
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