Investigation of the undersurface damaged layers in silicon wafers
The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates were layer by layer etched in the polishing etching solution for investigation of...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 1999 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/120247 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Investigation of the undersurface damaged layers in silicon wafers / R.Yu. Holiney, L.A. Matveeva, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 10-12. — Бібліогр.: 11 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of UkraineSchreiben Sie den ersten Kommentar!