Effect of nonuniform doping profile on thermometric performance of diode temperature sensors
A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The current-voltage characteristic, fr...
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| Datum: | 2002 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121193 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of nonuniform doping profile on thermometric performance of diode temperature sensors / V.N. Sokolov, Yu.М. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 201-211. — Бібліогр.: 25 назв. — англ. |