Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions
Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, heavily damaged layers containing voids were formed in ion path in Si and behind...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2015 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Zitieren: | Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions / M.I. Starchyk, L.S. Marchenko, M.B. Pinkovska, G.G. Shmatko, V.I. Varnina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 292-296. — Бібліогр.: 11 назв. — англ. |
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Starchyk, M.I. Marchenko, L.S. Pinkovska, M.B. Shmatko, G.G. Varnina, V.I. 2017-06-13T16:47:49Z 2017-06-13T16:47:49Z 2015 Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions / M.I. Starchyk, L.S. Marchenko, M.B. Pinkovska, G.G. Shmatko, V.I. Varnina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 292-296. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 61.72.-y, 61.80.-x https://nasplib.isofts.kiev.ua/handle/123456789/121198 DOI: 10.15407/spqeo18.03.292 Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, heavily damaged layers containing voids were formed in ion path in Si and behind it. The number of layers in the ion path region depends on the beam intensity. With increasing the beam current up to ~1 μA, the layer structures consisting of voids were observed only in the ion path. As helium is poorly soluble in Si, during implantation it collects in the gas-filled vacancy complexes. We consider that, like to the case of keV-ion implantation at fluences of Ф ≥ 10¹⁶ ion/cm² , an amorphous layer is created in the ion stopping region at annealing. Moving by recrystallization fronts on both sides of the amorphous layer, vacancy clusters are collected inside, coalesce and form voids. It is a combination of high energy and high fluence helium implantation that can form layered structure with voids in silicon, as observed by us. At present, there is no strict explanation of the mechanism of voids’ ordering (forming of superlattice of them). Especially, it concerns the void layer formation beyond helium ion path. The concept of mobile solitons is used. Formation of the “lattice” from the voids leads to swelling of the material. Further researches are necessary to understand these processes and control them. The authors are grateful to Corresponding Member of NASU Vladimir Sugakov for a fruitful discussion of the results and help. The authors are also grateful to referee for careful reading the manuscript and discussion. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions |
| spellingShingle |
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions Starchyk, M.I. Marchenko, L.S. Pinkovska, M.B. Shmatko, G.G. Varnina, V.I. |
| title_short |
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions |
| title_full |
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions |
| title_fullStr |
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions |
| title_full_unstemmed |
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions |
| title_sort |
voids’ layer structures in silicon irradiated with high doses of high-energy helium ions |
| author |
Starchyk, M.I. Marchenko, L.S. Pinkovska, M.B. Shmatko, G.G. Varnina, V.I. |
| author_facet |
Starchyk, M.I. Marchenko, L.S. Pinkovska, M.B. Shmatko, G.G. Varnina, V.I. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, heavily damaged layers containing voids were formed in ion path in Si and behind it. The number of layers in the ion path region depends on the beam intensity. With increasing the beam current up to ~1 μA, the layer structures consisting of voids were observed only in the ion path. As helium is poorly soluble in Si, during implantation it collects in the gas-filled vacancy complexes. We consider that, like to the case of keV-ion implantation at fluences of Ф ≥ 10¹⁶ ion/cm² , an amorphous layer is created in the ion stopping region at annealing. Moving by recrystallization fronts on both sides of the amorphous layer, vacancy clusters are collected inside, coalesce and form voids. It is a combination of high energy and high fluence helium implantation that can form layered structure with voids in silicon, as observed by us. At present, there is no strict explanation of the mechanism of voids’ ordering (forming of superlattice of them). Especially, it concerns the void layer formation beyond helium ion path. The concept of mobile solitons is used. Formation of the “lattice” from the voids leads to swelling of the material. Further researches are necessary to understand these processes and control them.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121198 |
| citation_txt |
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions / M.I. Starchyk, L.S. Marchenko, M.B. Pinkovska, G.G. Shmatko, V.I. Varnina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 292-296. — Бібліогр.: 11 назв. — англ. |
| work_keys_str_mv |
AT starchykmi voidslayerstructuresinsiliconirradiatedwithhighdosesofhighenergyheliumions AT marchenkols voidslayerstructuresinsiliconirradiatedwithhighdosesofhighenergyheliumions AT pinkovskamb voidslayerstructuresinsiliconirradiatedwithhighdosesofhighenergyheliumions AT shmatkogg voidslayerstructuresinsiliconirradiatedwithhighdosesofhighenergyheliumions AT varninavi voidslayerstructuresinsiliconirradiatedwithhighdosesofhighenergyheliumions |
| first_indexed |
2025-12-07T16:09:31Z |
| last_indexed |
2025-12-07T16:09:31Z |
| _version_ |
1850866423491985408 |