Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical paramet...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2015 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121227 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing / G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 330-333. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862743395946987520 |
|---|---|
| author | Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. |
| author_facet | Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. |
| citation_txt | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing / G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 330-333. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical parameters of processes taking place under CDP. Calculations performed by the authors enabled to find technological regimes of processing that provides total removal of linear morphological defects from the surface of substrates after cutting. Comparison of experimental profilograms taken from the processed surfaces with theoretical dependences showed their satisfactory agreement.
|
| first_indexed | 2025-12-07T20:29:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121227 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:29:59Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. 2017-06-13T17:02:38Z 2017-06-13T17:02:38Z 2015 Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing / G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 330-333. — Бібліогр.: 10 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.330 PACS 81.65.Ps https://nasplib.isofts.kiev.ua/handle/123456789/121227 Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical parameters of processes taking place under CDP. Calculations performed by the authors enabled to find technological regimes of processing that provides total removal of linear morphological defects from the surface of substrates after cutting. Comparison of experimental profilograms taken from the processed surfaces with theoretical dependences showed their satisfactory agreement. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing Article published earlier |
| spellingShingle | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing Pashchenko, G.A. Kravetskyi, M.Yu. Fomin, A.V. |
| title | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_full | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_fullStr | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_full_unstemmed | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_short | Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| title_sort | modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121227 |
| work_keys_str_mv | AT pashchenkoga modelingtheprocessofremovalaimedatcuttracesonsemiconductorwafersbyusingthemethodofcontactlesschemicalanddynamicalpolishing AT kravetskyimyu modelingtheprocessofremovalaimedatcuttracesonsemiconductorwafersbyusingthemethodofcontactlesschemicalanddynamicalpolishing AT fominav modelingtheprocessofremovalaimedatcuttracesonsemiconductorwafersbyusingthemethodofcontactlesschemicalanddynamicalpolishing |