Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing за авторством Pashchenko, G.A., Kravetskyi, M.Yu., Fomin, A.V.

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Features of electrochemical processes at the boundary p-GaAs-HF water solution за авторством Pashchenko, G.A., Kravetskyi, M.Yu., Trishchuk, L.I.

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Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing за авторством Fomin, A.V., Pashchenko, G.A., Kravetskyi, M.Yu., Lutsyshyn, I.G.

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