Effect of mechanical stress on operation of diode temperature sensors
Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide with each other and with one of three main crystallographic directions [100],...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2002 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121331 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of mechanical stress on operation of diode temperature sensors / V.L. Borblik, Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 322-327. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862712922843643904 |
|---|---|
| author | Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| author_facet | Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| citation_txt | Effect of mechanical stress on operation of diode temperature sensors / V.L. Borblik, Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 322-327. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide with each other and with one of three main crystallographic directions [100], [110] and [111]. The cases of long and short diodes, compressive and tensile stresses are studied. It is shown that, under such conditions, two components of the piezojunction effect (namely: change in the minority carrier mobility and change in the intrinsic carrier concentration) act oppositely to each other. As a result, effect of longitudinal parasitic mechanical stress on indications of the silicon diode temperature sensors proves to be minimal in the direction of [100]-type [111]-type as it would be expected from rather than piezoresistivity of n-Si.
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| first_indexed | 2025-12-07T17:40:21Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121331 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:40:21Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. Shwarts, Yu.M. Venger, E.F. 2017-06-14T07:14:52Z 2017-06-14T07:14:52Z 2002 Effect of mechanical stress on operation of diode temperature sensors / V.L. Borblik, Yu.M. Shwarts, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 322-327. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 07.07.D https://nasplib.isofts.kiev.ua/handle/123456789/121331 Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide with each other and with one of three main crystallographic directions [100], [110] and [111]. The cases of long and short diodes, compressive and tensile stresses are studied. It is shown that, under such conditions, two components of the piezojunction effect (namely: change in the minority carrier mobility and change in the intrinsic carrier concentration) act oppositely to each other. As a result, effect of longitudinal parasitic mechanical stress on indications of the silicon diode temperature sensors proves to be minimal in the direction of [100]-type [111]-type as it would be expected from rather than piezoresistivity of n-Si. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of mechanical stress on operation of diode temperature sensors Article published earlier |
| spellingShingle | Effect of mechanical stress on operation of diode temperature sensors Borblik, V.L. Shwarts, Yu.M. Venger, E.F. |
| title | Effect of mechanical stress on operation of diode temperature sensors |
| title_full | Effect of mechanical stress on operation of diode temperature sensors |
| title_fullStr | Effect of mechanical stress on operation of diode temperature sensors |
| title_full_unstemmed | Effect of mechanical stress on operation of diode temperature sensors |
| title_short | Effect of mechanical stress on operation of diode temperature sensors |
| title_sort | effect of mechanical stress on operation of diode temperature sensors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121331 |
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