Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals
The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2016 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121517 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862599979054399488 |
|---|---|
| author | Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. |
| author_facet | Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. |
| citation_txt | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
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| first_indexed | 2025-11-27T22:35:49Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121517 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T22:35:49Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. 2017-06-14T15:11:13Z 2017-06-14T15:11:13Z 2016 Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.009 PACS 72.20.Ее, 73.63.Bd https://nasplib.isofts.kiev.ua/handle/123456789/121517 The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals Article published earlier |
| spellingShingle | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. |
| title | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_full | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_fullStr | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_full_unstemmed | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_short | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_sort | electron transport through nanocomposite sio₂(si) films containing si nanocrystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121517 |
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