Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals
The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2016 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121517 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ. |
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Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. 2017-06-14T15:11:13Z 2017-06-14T15:11:13Z 2016 Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.009 PACS 72.20.Ее, 73.63.Bd https://nasplib.isofts.kiev.ua/handle/123456789/121517 The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| spellingShingle |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. |
| title_short |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_full |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_fullStr |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_full_unstemmed |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals |
| title_sort |
electron transport through nanocomposite sio₂(si) films containing si nanocrystals |
| author |
Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. |
| author_facet |
Bratus, O.L. Evtukh, A.A. Steblova, O.V. Prokopchuk, V.M. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121517 |
| citation_txt |
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ. |
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| first_indexed |
2025-11-27T22:35:49Z |
| last_indexed |
2025-11-27T22:35:49Z |
| _version_ |
1850852924342665216 |