Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Vlasov, A.P., Bonchyk, A.Yu., Fodchuk, I.M., Barcz, A., Swiatek, Z.T., Zaplitnyy, R.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121591
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ.

Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer CdyHg₁₋yTe (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of dopants in the CdxHg₁₋xTe epitaxially grown layers.