An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications
An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operatio...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2006 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121592 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications / Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 43-54. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862563894309945344 |
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| author | Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. |
| author_facet | Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. |
| citation_txt | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications / Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 43-54. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operation regimes of the transistor. This model is valid for all regimes of normal operation, demonstrates proper description of high-temperature behavior of the subthreshold and off-state current. The model characteristics show a good agreement with the experimental data for temperatures up to 300 °C.
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| first_indexed | 2025-11-25T23:28:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121592 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T23:28:34Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. 2017-06-14T17:29:50Z 2017-06-14T17:29:50Z 2006 An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications / Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 43-54. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 85.30.Tv, 85.30.De https://nasplib.isofts.kiev.ua/handle/123456789/121592 An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operation regimes of the transistor. This model is valid for all regimes of normal operation, demonstrates proper description of high-temperature behavior of the subthreshold and off-state current. The model characteristics show a good agreement with the experimental data for temperatures up to 300 °C. The work was performed in the frame of SPRING
 project (project #IST-1999-12342), and also was
 partially supported by NATO CLG (PST CLG 979999).
 The authors are thankful to T.E. Rudenko, V. Kilchytska
 and A. Tuor for helpful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications Article published earlier |
| spellingShingle | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications Houk, Yu. Iniguez, B. Flandre, D. Nazarov, A. |
| title | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_full | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_fullStr | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_full_unstemmed | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_short | An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications |
| title_sort | analytical accumulation mode soi pmosfet model for high-temperature analog applications |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121592 |
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