Electrical properties of InSb p-n junctions prepared by diffusion methods
InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have b...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2016 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121603 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862553444607328256 |
|---|---|
| author | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_facet | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| citation_txt | Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.
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| first_indexed | 2025-11-25T21:07:28Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121603 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T21:07:28Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. 2017-06-14T17:53:19Z 2017-06-14T17:53:19Z 2016 Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.03.295 PACS 73.40.Gk, 73.40.Kp https://nasplib.isofts.kiev.ua/handle/123456789/121603 InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical properties of InSb p-n junctions prepared by diffusion methods Article published earlier |
| spellingShingle | Electrical properties of InSb p-n junctions prepared by diffusion methods Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| title | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_full | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_fullStr | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_full_unstemmed | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_short | Electrical properties of InSb p-n junctions prepared by diffusion methods |
| title_sort | electrical properties of insb p-n junctions prepared by diffusion methods |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121603 |
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