Determination of potential distribution in a three-barrier structure

Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism o...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Yodgorova, D.M., Zoirova, L.X., Karimov, A.V.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121616
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Zitieren:Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Yodgorova, D.M.
Zoirova, L.X.
Karimov, A.V.
author_facet Yodgorova, D.M.
Zoirova, L.X.
Karimov, A.V.
citation_txt Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism of current transport when changing the blocked p-n junctions and Schottky barriers were explained. It was shown that, at both polarities of operating regime, current characteristics are determined by blocked junctions. The obtained results are of interest for research of properties of three-barrier and similar phototransistor structures in response to external influences.
first_indexed 2025-11-27T02:20:14Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-27T02:20:14Z
publishDate 2006
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Yodgorova, D.M.
Zoirova, L.X.
Karimov, A.V.
2017-06-15T03:06:36Z
2017-06-15T03:06:36Z
2006
Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ.
1560-8034
PACS 42.79.Pw, 68.55Ac
https://nasplib.isofts.kiev.ua/handle/123456789/121616
Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism of current transport when changing the blocked p-n junctions and Schottky barriers were explained. It was shown that, at both polarities of operating regime, current characteristics are determined by blocked junctions. The obtained results are of interest for research of properties of three-barrier and similar phototransistor structures in response to external influences.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Determination of potential distribution in a three-barrier structure
Article
published earlier
spellingShingle Determination of potential distribution in a three-barrier structure
Yodgorova, D.M.
Zoirova, L.X.
Karimov, A.V.
title Determination of potential distribution in a three-barrier structure
title_full Determination of potential distribution in a three-barrier structure
title_fullStr Determination of potential distribution in a three-barrier structure
title_full_unstemmed Determination of potential distribution in a three-barrier structure
title_short Determination of potential distribution in a three-barrier structure
title_sort determination of potential distribution in a three-barrier structure
url https://nasplib.isofts.kiev.ua/handle/123456789/121616
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AT zoirovalx determinationofpotentialdistributioninathreebarrierstructure
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