Determination of potential distribution in a three-barrier structure
Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism o...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121616 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862589157137711104 |
|---|---|
| author | Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. |
| author_facet | Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. |
| citation_txt | Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism of current transport when changing the blocked p-n junctions and Schottky barriers were explained. It was shown that, at both polarities of operating regime, current characteristics are determined by blocked junctions. The obtained results are of interest for research of properties of three-barrier and similar phototransistor structures in response to external influences.
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| first_indexed | 2025-11-27T02:20:14Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121616 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T02:20:14Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. 2017-06-15T03:06:36Z 2017-06-15T03:06:36Z 2006 Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 42.79.Pw, 68.55Ac https://nasplib.isofts.kiev.ua/handle/123456789/121616 Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism of current transport when changing the blocked p-n junctions and Schottky barriers were explained. It was shown that, at both polarities of operating regime, current characteristics are determined by blocked junctions. The obtained results are of interest for research of properties of three-barrier and similar phototransistor structures in response to external influences. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Determination of potential distribution in a three-barrier structure Article published earlier |
| spellingShingle | Determination of potential distribution in a three-barrier structure Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. |
| title | Determination of potential distribution in a three-barrier structure |
| title_full | Determination of potential distribution in a three-barrier structure |
| title_fullStr | Determination of potential distribution in a three-barrier structure |
| title_full_unstemmed | Determination of potential distribution in a three-barrier structure |
| title_short | Determination of potential distribution in a three-barrier structure |
| title_sort | determination of potential distribution in a three-barrier structure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121616 |
| work_keys_str_mv | AT yodgorovadm determinationofpotentialdistributioninathreebarrierstructure AT zoirovalx determinationofpotentialdistributioninathreebarrierstructure AT karimovav determinationofpotentialdistributioninathreebarrierstructure |