Determination of potential distribution in a three-barrier structure
Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism o...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Цитувати: | Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ. |
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Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. 2017-06-15T03:06:36Z 2017-06-15T03:06:36Z 2006 Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 42.79.Pw, 68.55Ac https://nasplib.isofts.kiev.ua/handle/123456789/121616 Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism of current transport when changing the blocked p-n junctions and Schottky barriers were explained. It was shown that, at both polarities of operating regime, current characteristics are determined by blocked junctions. The obtained results are of interest for research of properties of three-barrier and similar phototransistor structures in response to external influences. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Determination of potential distribution in a three-barrier structure Article published earlier |
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Determination of potential distribution in a three-barrier structure |
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Determination of potential distribution in a three-barrier structure Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. |
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Determination of potential distribution in a three-barrier structure |
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Determination of potential distribution in a three-barrier structure |
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Determination of potential distribution in a three-barrier structure |
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Determination of potential distribution in a three-barrier structure |
| title_sort |
determination of potential distribution in a three-barrier structure |
| author |
Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. |
| author_facet |
Yodgorova, D.M. Zoirova, L.X. Karimov, A.V. |
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2006 |
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English |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Model m₁-p-n-m₂ structures with three barriers were considered; construction and technology of manufacturing the three-barrier m₁-pAlGaInAs-nGaAs-m₂ structure are presented. Experimental methods to determine voltages across every junction of the three-barrier structure were proposed. The mechanism of current transport when changing the blocked p-n junctions and Schottky barriers were explained. It was shown that, at both polarities of operating regime, current characteristics are determined by blocked junctions. The obtained results are of interest for research of properties of three-barrier and similar phototransistor structures in response to external influences.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121616 |
| citation_txt |
Determination of potential distribution in a three-barrier structure / D.M. Yodgorova, L.X. Zoirova, A.V. Karimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 35-39. — Бібліогр.: 16 назв. — англ. |
| work_keys_str_mv |
AT yodgorovadm determinationofpotentialdistributioninathreebarrierstructure AT zoirovalx determinationofpotentialdistributioninathreebarrierstructure AT karimovav determinationofpotentialdistributioninathreebarrierstructure |
| first_indexed |
2025-11-27T02:20:14Z |
| last_indexed |
2025-11-27T02:20:14Z |
| _version_ |
1850793808064675840 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 35-39.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
35
PACS 42.79.Pw, 68.55Ac
Determination of potential distribution
in a three-barrier structure
D.M. Yodgorova, L.X. Zoirova, A.V. Karimov
Physical-Technical Institute of the Scientific Association "Physics-Sun" of the Academy of Sciences of the Republic of
Uzbekistan, Mavlanov str., 2B, 700084, Tashkent
Phone: +998-71-1331271, fax: +998-71-1354291; e-mail: karimov@uzsci.net
Abstract. Model m1-p-n-m2 structures with three barriers were considered; construction
and technology of manufacturing the three-barrier m1-pAlGaInAs-nGaAs-m2 structure
are presented. Experimental methods to determine voltages across every junction of the
three-barrier structure were proposed. The mechanism of current transport when
changing the blocked p-n junctions and Schottky barriers were explained. It was shown
that, at both polarities of operating regime, current characteristics are determined by
blocked junctions. The obtained results are of interest for research of properties of three-
barrier and similar phototransistor structures in response to external influences.
Keywords: three-barrier structure, metal-semiconductor, p-n junction.
Manuscript received 07.03.06; accepted for publication 23.10.06.
1. Introduction
Nowdays, improvement of semiconductor device
effectiveness is carried out in the technological process
using several barriers. Then effectiveness of structures of
solar cell type is improved using series connection of
several cells switched in one direction with tunnel
junctions between them in one cascade [1]. In the
photodiode structure approaching, screw planar structures
with two Shottky barriers are formed to improve their
speed [2]. Existence of space charge layers near two
barriers causes a decrease in the total capacity of the
structure and as a result the speed increase takes place in
them. In the diode structures, all processes are determined
by a blocked junction due to one of the barriers is always
switched in the opposite direction of the others, besides
the voltage across the structure is determined as a whole
by the blocked contact. That is why, their current-voltage
characteristics (CVC) possess inverse brunches.
Two-side sensitive two-barrier m-p-m, m-n-m
structures with the Shottky barriers were described in
[3]; owning to both rectifying metal-semiconductor
junctions in them the photodetectors have high
photosensitivity in the shortwaved spectral range when
exciting them from any side.
To improve photosensitivity and speed of the
photodiode structure in the work [4], integration of p-n
junction and reverse-based metal-semiconductor junctions
into one aggregate structure was carried out. So, two-side
sensitive two-barrier m-p-n [5, 6] and three-barrier m-p-n-
m structures [7] were obtained. Their parameters depend
essentially on technology of formation of active layers
and potential barriers. Identity of CVC brunches was
determined by perfection and correlation of carrier
concentrations in regions forming the rectifying junction
[8, 9]. Specimens of the above mentioned works had
rather more high photosensitivity than an ordinar
photodiode structure with one junction. In [10, 11],
processes of photoelectric amplification and formation of
spectral characteristics in three-barrier m1-pAlGaInAs-
nGaAs-m2 structure were researched [12]. In operating
regime when changing the applied voltage, they were
redistributed between reverse-based barriers. The
character of their redistribution and process of growth
determines their photoelectric characteristics. Until
recently theoretical [13] and experimental [14]
approaches to researching the symmetrical m-n-m and
nonsymmetrical two-barrier structures are known.
In this work, described was redistribution of
potential in symmetrical three-barrier hetero-m1-
pAlGaInAs-nGaAs-m2-structures.
2. Experimental samples and methods of research
To investigate the potential redistribution between
barriers and determine the factors determining processes
of current characteristics forming, special three-barrier
heterostructures with symmetrical output characteristics
were manufactured. nGaAs:O with the carrier
concentration Nm = 1.1015 cm−3 was chosen as a substrate.
Heterojunctions were obtained by growth of Zn-doped
pAlGaInAs with Np = 2⋅1016 cm−3 on GaAs substrate.
Thickness of the films was 2 to 3 μm. Then diode m1-p-n-
m2 structure was formed depositing gold onto
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 35-39.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
36
-10 0 10 20 30 40 50 60 70 80
10-3
10-2
10-1
2
1
I, 10-6 А
V, В
1
2
Fig. 2. Current-voltage characteristic of three-barrier
m1-pAlGaInAs-nGaAs-m2 structure within the regimes of
forward (1) and reverse (2) biases of heterojunction.
pAl0.08Ga0.82In0.1As and silver with the thickness ~70 Å
onto the back surface of nGaAs:O in vacuum.
Here pm −1
1ϕ = 0.42 eV and 2
2
mn−ϕ = 0.88 eV for metal-
semiconductor junctions pAl0.08Ga0.82In0.1As and nGaAs-
Ag, accordingly. Heights of potential barriers ( pm −1
1ϕ and
2
2
mn−ϕ ) were determined from the dependence of square
root of photoresponse, recalculated per one photon
energy. That is in accordance with the data of [15]. The
area of the structure was reduced to 5×5 mm by scribing.
In the three-barrier structure, m1-p and n-m2 junctions
were series-connected but p-n junction is approaching.
This structure is two-side sensitive because both its
surfaces are photodetectors, photocurrent is created by
lighting any side.
At forward bias of p-n junction, two metal-
semiconductor junctions work within regime of reverse
bias, moreover the current in circuit is limited only by
the current of forward-biased metal-semiconductor
junction with the bigger resistance. At reverse bias of
p-n junction, a current is determined by blocked p-n
junction and forward-biased metal-semiconductor
junctions connected as one (Fig. 1). As shown in the
equivalent scheme (Fig. 1), the resistances of the first
and third junctions are Shottky barrier connected in
series, and it is possible to consider them as one
resistance 1
1R = 31 RR + , and the resistance of p-n
junction as R2. From slops of curves for forward and
reverse biases (Fig. 2) it is clear that the resistance
2
1
1 RR = , and three-barrier structure is symmetrical. We
can determine the voltage across every junction from the
data of CVC of Fig. 2 using the methods [14] for a two-
barrier structure.
We designate the voltage across R1
1 as V1
1 and R2
as V2. The sum of these voltages is the total voltage:
.2
1
1tot
21 npmnpm VVV −−−− += (1)
In their turn
21
31
1
1
mnpm VVV −− += , (2)
n
V1V2
p
1
Fig. 1. Simplified equivalent scheme of a three-barrier
structure reduced to the two-barrier one.
where pmV −1
1 and 2
3
mnV − are the voltages across m1-p
and n-m2 junctions. Because of the equality of currents
flowing through all the junctions:
npnp RVVR −− = 2
1
12
1
1 , (3)
then
1
1
1
12
2 R
VR
V
np
np
−
− = and (4)
npV −
2 = 21
tot2
mnpmnp IR −−−− . (5)
For the three-barrier m1-p-n-m2 system, assuming
21
31
1
12
mnpmnp RRRR −−− === as it is in symmetrical
structure, we determine the resistance of the separate
( 2R or 1
1R ) junction in the point of contrary bend of
CVC:
0
00
2 22 I
VR
R == , (6)
where 0V , 0I are the voltage and current in the point of
contrary bend, respectively. Resulting resistance of three
p-n junctions connected in series is equal:
R 0 =
0
0
I
V . (7)
Because [14]
21
tot
0
0
2 2
mnpmnp I
I
V
V −−−− = (8)
and
npmnpm VVV −−−− −= 2tot
1
1
21 (9)
on the base of the formulas (8) and (9) in the case of
blocked metal-semiconductor junctions, we can calculate
the voltages across npR −
2 and 1
1R junctions. When
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 35-39.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
37
changing the polarity of the applied voltage, the data for
npR −
2 junction must be vary by the same way as for 1
1R
one. In the case when the carrier concentrations in p and
n regions are equal and the heights of metal-
semiconductor potential barriers are equal, too, ϕ1 = ϕ2,
we have
V pm −1
1 = V 2
3
mn− , (10)
V 1
1 = 2V pm −1
1 . (11)
As a result, from the dependence (8) taking into account
V pm −1
1 = V 1
1 /2, (12)
we obtain formula for the voltage across the metal-
semiconductor m-p junction
22
21
1 tot
0
0
1
mnpm
pm I
I
V
V
−−−
− = . (13)
We also find expressions for the voltages
V 1
1 = V pm −1
1 + V 2
3
mn− , (14)
V 2
3
mn− = V 1
1− V pm −1
1 . (15)
In the case when the heights of potential barriers are not
equal ( 1ϕ ≠ 2ϕ ), voltages across them can be different,
and there is certain correlation between their resistances
pm
mn
R
R
−
−
1
2
1
3 = 0
1
0
3
Е
Е
, (16)
where 0
3Е
is the electric field of m1-p junction, which is
determined by relation of the potential barrier height to
the thickness of the space charge layer [16]
2
1
2
2 10
30
3
30
3
2/
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
==
−
−
n
mn
mn
NqW
E
ϕεεϕϕ . (17)
Here 0
1E is the electric field of m1-p junction, it is equal
2
1
1
2 10
10
1
10
1
2
/ ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
==
−
−
p
pm
mn
NqW
E
ϕεε
ϕ
ϕ
. (18)
Within the regime of forward-biased p-n junction,
taking into account (16)-(18) and solving the equations
(2) and (18)
pm
mn
V
V
−
−
1
2
1
3 = 0
1
0
3
Е
Е , (19)
we obtain expression relating the voltage across the m1-p
junction with the total voltage
0
3
0
1
0
11
)rev(1)rev(1
1
EE
E
VV pm
+
=− . (20)
Here, 0
3
0
1
0
1
ЕЕ
Е
+
is the coefficient describing relation of
electrical fields between metal-semiconductor barriers
connected in series, besides
forw
0
3
0
1
0
1
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
+ ЕЕ
Е
=
rev
0
3
0
1
0
1
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
+ ЕЕ
Е
(21)
Using the formula (2), we determine the voltage across
another n-m2 junction
V 2
)rev(3
mn− = V1
)rev(1 − V pm −1
)rev(1 . (22)
Within the blocked p-n junction regime, we find the
voltage across the forward-biased m1-p junction by the
same way
V pm −1
)forw(1 = V1
)forw(1
.
0
3
0
1
0
1
ЕЕ
Е
+
(23)
and using the formula (23) we determine the voltages
across the second forward-biased n-m2 junction
V 2
)forw(3
mn− =V1
)forw(1 − V pm −1
)forw(1 . (24)
Then, we find npV −
2 voltage across the blocked p-n
junction
V 1
)forw(1
m
tot(rev))rev(2
21 VVV mnpnp −= −−−− . (25)
So, we have the formulas to determine the voltages
across every junction of the three-barrier structure.
3. Results and discussion
In researching Au-pAl0.08Ga0.82In0.1As-nGaAs-Ag-
structure, because of resemblance of CVC when varying
the applied voltage, it is enough to estimate the applied
voltages npV −
2 and V1
1 for only one of the regimes and
then to replace the obtained values for the other regime.
In the point of contrary bend at V = 5 V, I =
0.003 μA (Fig. 2). Then taking into account the
calculated values of the coefficient and formula (12) and
using the formulas (16), (17), (19), (21), we determine
the voltages across the p-n heterojunction: npV −
)forw(2 and
1
)rev(1V – across the metal-semiconductor series-
connected junctions as well as V pm −1
1 and V 2
3
mn− –
across the separate m1-p and n-m2 junctions.
Within the forward-biased p-n heterojunction regi-
me, we calculated values of the space charge layer
thickness, electrical field intensity, capacities of blocked
m1-p and n-m2 junctions using the formulas (26)-(29)
2
1
11
1
)(2 )rev(110
⎟⎟
⎟
⎠
⎞
⎜⎜
⎜
⎝
⎛ +
=
−−
−
p
pmpm
pm
N
V
q
W
ϕεε
, (26)
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 35-39.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
38
Table 1. Data of symmetrical Au-pAl0.08Ga0.82In0.1As-nGaAs-Ag structure within the forward-biased p-n heterojunction
regime.
21
tot
mnpmV −−− , V 2 5 10 15 20 30 40 70
21
tot
mnpm
I
−−− , μA 0.001 0.003 0.006 0.008 0.010 0.014 0.017 0.025
npV −
)forw(2 , V 1 3 6 8 10 14 17 25
1
)rev(1V , V 1 2 4 7 10 16 23 45
pmV −1
)rev(1 , V 0.758 1.56 3.0 5.3 7.58 12.12 17.43 34.1
pmW −1 , 10−5cm 2.72 3.53 4.64 6 7.1 8.89 10.6 14.7
E, 105 V/cm 0.43 0.56 0.74 0.95 1.13 1.41 1.67 2.35
С, 109 F 11.58 8.92 6.79 5.25 4.44 3.54 2.97 2.14
V 2
)rev(3
mn− , V 0.242 0.484 1.0 1.7 2.42 3.88 5.57 10.89
2mnW − ,10−5cm 8.53 10.37 14.3 19.6 25.1 36.2 49.02 89.5
E,105 V/cm 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
С, 10–9 F 2.85 2.4 1.7 1.24 0.97 0.67 0.49 0.28
Table 2. Data of symmetrical Au-pAl0.08Ga0.82In0.1As-nGaAs-Ag structure within the reverse-biased p-n heterojunction
regime.
21
tot
mnpmV −−− , V 2 5 10 15 20 30 40 70
21
tot
mnpm
I
−−− , μA 0.001 0.003 0.006 0.008 0.010 0.014 0.017 0.025
V 1
)forw(1 , V 1 3 6 8 10 14 17 25
pmV −1
)forw(1 , V 0.758 2.27 4.55 6.06 7.58 10.61 12.88 18.95
V 2
)forw(3
mn− , V 0.242 0.73 1.45 1.94 2.42 3.39 4.12 6.05
V np−
)rev(2 , V 1 2 4 7 10 16 23 45
npW − ,10−5cm 16.46 20.08 25.8 32.6 38.2 47.45 56.36 77.98
E,105 V/cm 0.12 0.15 0.196 0.25 0.29 0.36 0.43 0.59
С, 10–9 F 1.91 1.57 1.22 0.97 0.82 0.66 0.56 0.40
2
1
22
2 )rev(310 (2
⎟⎟
⎟
⎠
⎞
⎜⎜
⎜
⎝
⎛ +
=
−−
−
n
mnmn
mn
N
V
q
W
ϕεε
. (27)
Capacity and electrical field intensities for every
junction were calculated on the base of these space
charge layer thickness values by using the formulas
W
S
C 0εε
= , (28)
W
VE = . (29)
Within the reverse-biased heterojunction regime,
we calculated the value of the p-n junction space charge
layer thickness [13]
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
⋅+⋅
−⋅+⋅
=
−
−
pnpn
np
Dnp
np NNNNq
VVNN
W
)(
)()(2
0201
2
2
02012
εεεε
εεεε
, (30)
where E1 = 11.4 for Al0.08Ga0.82In0.1As and E2 = 11 for
GaAs; VD = 1.054 V. Electrical field intensities and
blocked p-n heterojunction capacity were calculated
using the formulas (36), (37). The calculated data are
summarized in Tables 1 and 2. Interconnection between
index of CVC, carrier concentration, space charge layer
thickness, dielectrical permittivity, capacity and
electrical fields of junctions are ascertained on the base
of the data shown in Tables 1 and 2.
4. Conclusion
Considered are the model m2-p-n-m2 structures with
three barriers, given are construction and manufacturing
technology of three-barrier structure on the base of
gallium arsenide. Proposed is the experimental calcu-
lation method to determine voltages that drop on each
transitions of the three-barrier structure. Obtained results
can be applied for research the properties of three-barrier
and analogical phototransistors under external affect.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006. V. 9, N 3. P. 35-39.
© 2006, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
39
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