Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation
On the basis of the Wagner approach in the theory of thermal breakdown of dielectrics, the analogous phenomenon in semiconductor films is analyzed. It is done without account of the stabilization effect connected with an external resistance. Formulas giving values of the fused channel diameters and...
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| Veröffentlicht in: | Functional Materials |
|---|---|
| Datum: | 2005 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/134780 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation / N.V. Andreyeva, Yu.P. Virchenko // Functional Materials. — 2005. — Т. 12, № 2. — С. 190-195. — англ. |
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