Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment

This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). T...

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Date:2008
Main Authors: Misiuk, A., Ch. Lee
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2008
Series:Functional Materials
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/137235
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-137235
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spelling nasplib_isofts_kiev_ua-123456789-1372352025-02-23T19:23:43Z Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment Матеріали для спінтроніки на основі кремнію, одержані шляхом імплантації та обробки температурою та тиском Misiuk, A. Ch. Lee Technology This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). The HT-(HP) treatment affects, among others, the solid phase epitaxial re-growth of amorphous a-Si layer created at implantation. Processed Si:V, Si:Cr and Si:Mn indicate magnetic ordering up to above 300 K. This means that the new Si:V, Si:Cr and Si:Mn materials belonging to the family of Diluted Magnetic Semiconductors have been produced. 2008 Article Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ. 1027-5495 https://nasplib.isofts.kiev.ua/handle/123456789/137235 en Functional Materials application/pdf НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Technology
Technology
spellingShingle Technology
Technology
Misiuk, A.
Ch. Lee
Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
Functional Materials
description This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage (D≤1*10¹⁶ cm⁻²) of V⁺, Cr⁺ and Mn⁺, and subsequently processed at HT-(HP). The HT-(HP) treatment affects, among others, the solid phase epitaxial re-growth of amorphous a-Si layer created at implantation. Processed Si:V, Si:Cr and Si:Mn indicate magnetic ordering up to above 300 K. This means that the new Si:V, Si:Cr and Si:Mn materials belonging to the family of Diluted Magnetic Semiconductors have been produced.
format Article
author Misiuk, A.
Ch. Lee
author_facet Misiuk, A.
Ch. Lee
author_sort Misiuk, A.
title Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
title_short Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
title_full Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
title_fullStr Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
title_full_unstemmed Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
title_sort silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment
publisher НТК «Інститут монокристалів» НАН України
publishDate 2008
topic_facet Technology
url https://nasplib.isofts.kiev.ua/handle/123456789/137235
citation_txt Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment / A. Misiuk, C. Lee // Functional Materials. — 2008. — Т. 15, № 1. — С. 131-138. — Бібліогр.: 39 назв. — англ.
series Functional Materials
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AT chlee siliconbasedmaterialsforspintronicspreparedbyimplantationandtemperaturepressuretreatment
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AT chlee materíalidlâspíntroníkinaosnovíkremníûoderžaníšlâhomímplantacíítaobrobkitemperaturoûtatiskom
first_indexed 2025-11-24T15:49:08Z
last_indexed 2025-11-24T15:49:08Z
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