The influence of ethylene glycol on the chemical interaction of PbTe and Pb₁₋ₓSnₓTe crystals with H₂O₂–HBr–ethylene glycol etching compositions

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Authors: Malanych, G.P., Tomashyk, V.M., Lytvyn, O.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214906
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The influence of ethylene glycol on the chemical interaction of PbTe and Pb₁₋ₓSnₓTe crystals with H₂O₂–HBr–ethylene glycol etching compositions / G.P. Malanych, V.M. Tomashyk, O.S. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 91-95. — Бібліогр.: 10 назв. — англ.

The process of cutting, mechanical and chemical treatment of the PbTe and Pb₁₋ₓSnₓTe crystal surface has been studied. The dependences of the chemical-mechanical polishing rate versus dilution of the base polishing etchant H₂O₂–HBr–ethylene glycol by the ethylene glycol have been determined. The surface states after chemical etching have been investigated using electron, metallographic, and atomic force microscopy, as well as X-ray microanalysis. It has been shown that the surface state is improved after chemical etching. Efficient methods for washing the samples after different types of PbTe and Pb₁₋ₓSnₓTe surface treatment (cutting the crystal, mechanical surface treatment, and chemical removal of the surface-damaged layer) have been developed.