Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy
For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing bas...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| ISSN: | 1560-8034 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214922 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AᶦᶦᶦBᵛ direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants.
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| ISSN: | 1560-8034 |