Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation
In this work is shown that: (i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance and RS spectra; (ii) The Si-SiO2 interface structure is regulated under the ele...
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| Date: | 1999 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
1999
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| Series: | Вопросы атомной науки и техники |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/81353 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation / L.A. Matveeva, E.F. Vanger, R.Yu. Holine // Вопросы атомной науки и техники. — 1999. — № 3. — С. 103-104. — Бібліогр.: 7 назв. — англ. |