Influence of small miscuts on self-ordered growth of Ge nanoislands
Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform...
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| Date: | 2011 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Using high-resolution X-ray diffraction (HRXRD), we have investigated
lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses
deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering
degree is initiated by ordered modulation of non-uniform deformation fields. This
modulation is induced by small (∼0.3°) misorientation of Si substrate from [001]
direction. Finally, we show that the miscut can be the source of perfectly ordered
nanoisland arrays in two dimensions when the growth is performed on the strained SiGe
(001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of
buffer layer surface from [001] growth direction via increasing the Ge content. |
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