Influence of small miscuts on self-ordered growth of Ge nanoislands

Influence of small miscuts on self-ordered growth of Ge nanoislands

Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform...

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Дата:2011
Автори: Gudymenko, O.Yo., Kladko, V.P., Yefanov, O.M., Slobodian, M.V., Polischuk, Yu.S., Krasilnik, Z.F., Lobanov, D.V., Novikov, А.А.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling oai:nasplib.isofts.kiev.ua:123456789-1177962025-06-03T16:28:46Z Influence of small miscuts on self-ordered growth of Ge nanoislands Gudymenko, O.Yo. Kladko, V.P. Yefanov, O.M. Slobodian, M.V. Polischuk, Yu.S. Krasilnik, Z.F. Lobanov, D.V. Novikov, А.А. Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform deformation fields. This modulation is induced by small (∼0.3°) misorientation of Si substrate from [001] direction. Finally, we show that the miscut can be the source of perfectly ordered nanoisland arrays in two dimensions when the growth is performed on the strained SiGe (001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of buffer layer surface from [001] growth direction via increasing the Ge content. The authors acknowledge the financial support of the National Academy of Sciences of Ukraine (projects No 3.5.1.12, No 3.5.1.30) and State Agency for Science, Innovation and Informatization of Ukraine (project M/ 212 − 2011). 2011 Article Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 68.37.Ef, 81.07.Ta, 81.16.Rf https://nasplib.isofts.kiev.ua/handle/123456789/117796 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Using high-resolution X-ray diffraction (HRXRD), we have investigated lateral ordering the nanoislands formed from Ge wetting layer of various thicknesses deposited on a strained Si₁₋xGex sublayer. We observed that the high lateral ordering degree is initiated by ordered modulation of non-uniform deformation fields. This modulation is induced by small (∼0.3°) misorientation of Si substrate from [001] direction. Finally, we show that the miscut can be the source of perfectly ordered nanoisland arrays in two dimensions when the growth is performed on the strained SiGe (001) sublayer. The effect of substrate miscut can be amplified tuning the deviation of buffer layer surface from [001] growth direction via increasing the Ge content.
format Article
author Gudymenko, O.Yo.
Kladko, V.P.
Yefanov, O.M.
Slobodian, M.V.
Polischuk, Yu.S.
Krasilnik, Z.F.
Lobanov, D.V.
Novikov, А.А.
spellingShingle Gudymenko, O.Yo.
Kladko, V.P.
Yefanov, O.M.
Slobodian, M.V.
Polischuk, Yu.S.
Krasilnik, Z.F.
Lobanov, D.V.
Novikov, А.А.
Influence of small miscuts on self-ordered growth of Ge nanoislands
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Gudymenko, O.Yo.
Kladko, V.P.
Yefanov, O.M.
Slobodian, M.V.
Polischuk, Yu.S.
Krasilnik, Z.F.
Lobanov, D.V.
Novikov, А.А.
author_sort Gudymenko, O.Yo.
title Influence of small miscuts on self-ordered growth of Ge nanoislands
title_short Influence of small miscuts on self-ordered growth of Ge nanoislands
title_full Influence of small miscuts on self-ordered growth of Ge nanoislands
title_fullStr Influence of small miscuts on self-ordered growth of Ge nanoislands
title_full_unstemmed Influence of small miscuts on self-ordered growth of Ge nanoislands
title_sort influence of small miscuts on self-ordered growth of ge nanoislands
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2011
citation_txt Influence of small miscuts on self-ordered growth of Ge nanoislands / O.Yo. Gudymenko, V.P. Kladko, O.M. Yefanov, M.V. Slobodian, Yu.S.Polischuk, Z.F. Krasilnik, D.V. Lobanov, А.А. Novikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 389-392. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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