ДЕКОГЕРЕНЦІЇ ІІІ-N НИЗЬКОРОЗМІРНІ НАНОСТРУКТУР КВАНТОВИХ ПРОЦЕСОРІВ
In the work proposes an increase in the time of the coherent state at room temperature by using quantum dots inside the single crystal structure with a large band gap, in particular, direct-gap materials or aluminum gallium nitride grown in nanoreactors anodic aluminum oxide or silicon oxide , resul...
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| Datum: | 2021 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Russian |
| Veröffentlicht: |
Vinnytsia National Technical University
2021
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| Schlagworte: | |
| Online Zugang: | https://oeipt.vntu.edu.ua/index.php/oeipt/article/view/334 |
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| Назва журналу: | Optoelectronic Information-Power Technologies |
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Optoelectronic Information-Power Technologies| Zusammenfassung: | In the work proposes an increase in the time of the coherent state at room temperature by using quantum dots inside the single crystal structure with a large band gap, in particular, direct-gap materials or aluminum gallium nitride grown in nanoreactors anodic aluminum oxide or silicon oxide , resulting in the pores of alumina . Our results show the effectiveness of such self-organized structures in order to create arrays of quantum dots that are resistant to decoherence processes. In comparison with other technologies for building a quantum computer, the use of wide-band direct-gap materials provides defect-free operation of the devices at room temperature. |
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