Особливості фото-ерс нанокластерних структур Ge, утворених на оксидованій поверхні Si
Ge nanocluster systems on SiOх are paid much interest of scientists today as far as introduction of an insulting SiOх layer can modify essentially the electrical properties of well examined Ge on Si structures making such systems prospective in the view of their possible application to new nanoelect...
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| Datum: | 2011 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2011
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| Online Zugang: | https://www.cpts.com.ua/index.php/cpts/article/view/122 |
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| Назва журналу: | Chemistry, Physics and Technology of Surface |
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Chemistry, Physics and Technology of Surface| Zusammenfassung: | Ge nanocluster systems on SiOх are paid much interest of scientists today as far as introduction of an insulting SiOх layer can modify essentially the electrical properties of well examined Ge on Si structures making such systems prospective in the view of their possible application to new nanoelectronic devices such as memory cells, solar elements, and infrared photodetectors. A possibility of epitaxial formation of Si and Ge nanoclusters on initially amorphous silicon oxide layer is considered. The effect of such a layer on the density and uniformity distribution of the self-assembled Ge nanoclusters formed in molecular-beam epitaxy chamber "Katun" on SiOх (х ? 2) and their optoelectronic properties, in particular lateral photoconductivity and photo-emf, has been investigated. |
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