Синтез та фізико-хімічні властивості нанорозмірного діоксиду ванадію на поверхні кремнію
The method of molecular layering ? atomic layer deposition with varied conditions of synthesis has been used to obtain two- and tree-dimensional nanostructures of vanadium dioxide on single-crystal silicon surface. A growth mechanism for nanostructures of various dimensionalities has been proposed b...
Saved in:
| Date: | 2011 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | Russian |
| Published: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2011
|
| Online Access: | https://www.cpts.com.ua/index.php/cpts/article/view/123 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Chemistry, Physics and Technology of Surface |
Institution
Chemistry, Physics and Technology of Surface| Summary: | The method of molecular layering ? atomic layer deposition with varied conditions of synthesis has been used to obtain two- and tree-dimensional nanostructures of vanadium dioxide on single-crystal silicon surface. A growth mechanism for nanostructures of various dimensionalities has been proposed based on the data of atomic force microscopy. The magnetic and electrical properties of obtained samples have been studied by magnetic susceptibility and impedance spectroscopy methods. The semiconductor-metal phase transition in the nanosized vanadium dioxide on the silica surface has been found to occur at a reduced temperature as compared with that typical of the bulk. |
|---|