Дослідження плівок SiC, отриманих на підкладинці porous-Si/Si
The paper describes the method of obtaining the SiC/porous-Si/Si heterostructure and the study of its structural and morphological properties. The method of obtaining heterostructures consisted of several stages: electrochemical etching of single-crystal silicon p-Si (111), annealing of porous Si in...
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| Datum: | 2024 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
Chuiko Institute of Surface Chemistry National Academy of Sciences of Ukraine
2024
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| Schlagworte: | |
| Online Zugang: | https://www.cpts.com.ua/index.php/cpts/article/view/723 |
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| Назва журналу: | Chemistry, Physics and Technology of Surface |