Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
Operation of the Alx(z)Ga1-x(z)As variband Gunn diodes with n+-n and n+-n–-n cathode contacts for different active region lengths and variband layer thicknesses is studied with the two-level model of intervalley electron transfer in a variband semiconductor. These Alx(z)Ga1-x(z)As diodes are shown t...
Збережено в:
| Дата: | 2013 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | rus |
| Опубліковано: |
Видавничий дім «Академперіодика»
2013
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| Онлайн доступ: | http://rpra-journal.org.ua/index.php/ra/article/view/654 |
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| Назва журналу: | Radio physics and radio astronomy |
Репозитарії
Radio physics and radio astronomy| Резюме: | Operation of the Alx(z)Ga1-x(z)As variband Gunn diodes with n+-n and n+-n–-n cathode contacts for different active region lengths and variband layer thicknesses is studied with the two-level model of intervalley electron transfer in a variband semiconductor. These Alx(z)Ga1-x(z)As diodes are shown to outperform by output and generation efficiency those employing spatially homogeneous AlxGa1-xAs compound semiconductor within the whole frequency range for x=0ё0.2. |
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