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Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts

Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts

Operation of the Alx(z)Ga1-x(z)As variband Gunn diodes with n+-n and n+-n–-n cathode contacts for different active region lengths and variband layer thicknesses is studied with the two-level model of intervalley electron transfer in a variband semiconductor. These Alx(z)Ga1-x(z)As diodes are shown t...

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Main Author: Storozhenko, I. P.
Format: Article
Language:rus
Published: Видавничий дім «Академперіодика» 2013
Online Access:http://rpra-journal.org.ua/index.php/ra/article/view/654
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spelling oai:ri.kharkov.ua:article-6542013-02-09T10:44:23Z Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts Диоды Ганна на основе варизонного Alx(z)Ga1-x(z)As c различными катодными контактами Storozhenko, I. P. Operation of the Alx(z)Ga1-x(z)As variband Gunn diodes with n+-n and n+-n–-n cathode contacts for different active region lengths and variband layer thicknesses is studied with the two-level model of intervalley electron transfer in a variband semiconductor. These Alx(z)Ga1-x(z)As diodes are shown to outperform by output and generation efficiency those employing spatially homogeneous AlxGa1-xAs compound semiconductor within the whole frequency range for x=0ё0.2. С помощью двухуровневой модели междолинного переноса электронов в варизонном полупроводнике исследована работа диодов Ганна на основе варизонного Alx(z)Ga1-x(z)As с n+-n и n+-n–-n катодами при различной длине активной области и толщине варизонного слоя. Показано, что Alx(z)Ga1-x(z)As диоды по выходной мощности и эффективности генерации во всем диапазоне частот превосходят диоды на основе пространственно однородных по составу полупроводниковых соединений AlxGa1-xAs при x=0ё0.2. Видавничий дім «Академперіодика» 2013-02-09 Article Article application/pdf http://rpra-journal.org.ua/index.php/ra/article/view/654 РАДИОФИЗИКА И РАДИОАСТРОНОМИЯ; Vol 11, No 2 (2006); 186 RADIO PHYSICS AND RADIO ASTRONOMY; Vol 11, No 2 (2006); 186 РАДІОФІЗИКА І РАДІОАСТРОНОМІЯ; Vol 11, No 2 (2006); 186 2415-7007 1027-9636 rus http://rpra-journal.org.ua/index.php/ra/article/view/654/205
institution Radio physics and radio astronomy
collection OJS
language rus
format Article
author Storozhenko, I. P.
spellingShingle Storozhenko, I. P.
Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
author_facet Storozhenko, I. P.
author_sort Storozhenko, I. P.
title Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
title_short Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
title_full Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
title_fullStr Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
title_full_unstemmed Alx(z)Ga1-x(z)As Variband Gunn Diodes with Different Cathode Contacts
title_sort alx(z)ga1-x(z)as variband gunn diodes with different cathode contacts
title_alt Диоды Ганна на основе варизонного Alx(z)Ga1-x(z)As c различными катодными контактами
description Operation of the Alx(z)Ga1-x(z)As variband Gunn diodes with n+-n and n+-n–-n cathode contacts for different active region lengths and variband layer thicknesses is studied with the two-level model of intervalley electron transfer in a variband semiconductor. These Alx(z)Ga1-x(z)As diodes are shown to outperform by output and generation efficiency those employing spatially homogeneous AlxGa1-xAs compound semiconductor within the whole frequency range for x=0ё0.2.
publisher Видавничий дім «Академперіодика»
publishDate 2013
url http://rpra-journal.org.ua/index.php/ra/article/view/654
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first_indexed 2024-05-26T06:32:05Z
last_indexed 2024-05-26T06:32:05Z
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