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Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation

The frequency dependence of the generation efficiency of an m-n:InxGa1-xAs-n:GaAs-n+:GaAs TED with the 2.5-mm long active region is calculated. The optimum values – which yield the diode maximum generation efficiency – for the n:InxGa1-xAs cathode length, the cathode concentration of ionized impurit...

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Bibliographic Details
Main Authors: Arkusha, Yu. V., Prokhorov, E. D., Storozhenko, I. P.
Format: Article
Language:rus
Published: Видавничий дім «Академперіодика» 2013
Online Access:http://rpra-journal.org.ua/index.php/ra/article/view/736
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