Формирование гетероструктур GaTe/CdSe для использования в солнечных элементах
The issue of replacing cadmium chalcogenides in solar cell structures is considered. The process of cadmium selenide epitaxy on a layered GaTe substrate has been investigated. It is shown that this process is accompanied by reactive interaction of the components, subsequent diffusion of gallium at...
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| Date: | 2005 |
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| Main Author: | |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.2.59 |
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| Journal Title: | Technology and design in electronic equipment |