Структуры на основе гетероперехода "кремний—арсенид галлия" для интегральных оптронов

• Date: 2003
• Main Authors: Terletskaya, L. L., Kalinichenko, L. F., Golubtsov, V. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: гетеропереход; кремний; арсенид галлия; фотолюминесценция; интегральный оптрон; жидкофазная эпитаксия
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.51
• Journal Title: Technology and design in electronic equipment

A comparative analysis of the photoluminescence spectra of heteroepitaxial n‑GaAs layers and the spectral characteristics of p+‑Si—n‑Si—p‑Si—n+‑GaAs structures is presented. The GaAs layers were grown on Si substrates by liquid‑phase epitaxy from a solution‑melt. A complete coincidence of the maxima...