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Взрывная кристаллизация тонких пленок полупроводников при облучении γ-квантами

Previously undescribed structural microdefects arising in semiconductor films under gamma irradiation have been identified. It is shown that the cause of changes in the optical properties of such films is related to micro‑inhomogeneities and elastic fields around them. Experimental studies of radiat...

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Bibliographische Detailangaben
Datum:2003
Hauptverfasser: Khramov, E. F., Prokhorov, G. V., Pelikhaty, N. M., Hnap, A. K.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2003
Schlagworte:
взрывная кристаллизация
тонкие пленки
полупроводники
γ‑кванты
структурные микродефекты
радиационное дефектообразование
твердотельная электроника
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.58
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Назва журналу:Technology and design in electronic equipment
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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:Previously undescribed structural microdefects arising in semiconductor films under gamma irradiation have been identified. It is shown that the cause of changes in the optical properties of such films is related to micro‑inhomogeneities and elastic fields around them. Experimental studies of radiation defect formation processes revealed one of the possible reasons for distortion of the electrical signal in layered structures of solid‑state electronic devices.

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