Взрывная кристаллизация тонких пленок полупроводников при облучении γ-квантами
Previously undescribed structural microdefects arising in semiconductor films under gamma irradiation have been identified. It is shown that the cause of changes in the optical properties of such films is related to micro‑inhomogeneities and elastic fields around them. Experimental studies of radiat...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.58 |
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| Назва журналу: | Technology and design in electronic equipment |
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Репозитарії
Technology and design in electronic equipment| Резюме: | Previously undescribed structural microdefects arising in semiconductor films under gamma irradiation have been identified. It is shown that the cause of changes in the optical properties of such films is related to micro‑inhomogeneities and elastic fields around them. Experimental studies of radiation defect formation processes revealed one of the possible reasons for distortion of the electrical signal in layered structures of solid‑state electronic devices. |
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