Влияние облучения быстрыми нейтронами на эпитаксиальный арсенид галлия

• Published in: Технологія та конструювання в електронній апаратурі
• Date: 2002
• Issue: 6
• Pages: 7-9
• ISSN: 3083-6549
• Author Affiliations: V. A. Zavadsky — Odessa National Maritime Academy, Odesа, Ukraine; S. V. Lenkov — National Aviation University, Kyiv, Ukraine; D. V. Lukomsky — National Aviation University, Kyiv, Ukraine; V. A. Mokritsky — Odessa National Maritime Academy, Odesа, Ukraine
• Main Authors: Zavadsky, V. A., Lenkov, S. V., Lukomsky, D. V., Mokritsky, V. A.
• Format: Article
• Language: English
• Published: PE "Politekhperiodika", Book and Journal Publishers 2002
• Subjects: GaAs; эпитаксиальные слои; облучение быстрыми нейтронами; подвижность носителей заряда
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.07
• Journal Title: Technology and design in electronic equipment

The paper demonstrates the possibility of controlling the parameters of gallium arsenide epitaxial layers using radiation treatment with fast neutrons. From a technological perspective, neutron irradiation is proposed to be divided into two types depending on the radiation dose. The first one (radiation doses up to 1·1015 cm–2) can serve as a means of improving the properties of the layers by increasing carrier mobility and operation speed. The second one (radiation doses exceeding 5·1015 cm–2) reduces the concentration and mobility of charge carriers.