Влияние облучения быстрыми нейтронами на эпитаксиальный арсенид галлия

• Published in: Технологія та конструювання в електронній апаратурі
• Date: 2002
• Issue: 6
• Pages: 7-9
• ISSN: 3083-6549
• Author Affiliations: V. A. Zavadsky — Odessa National Maritime Academy, Odesа, Ukraine; S. V. Lenkov — National Aviation University, Kyiv, Ukraine; D. V. Lukomsky — National Aviation University, Kyiv, Ukraine; V. A. Mokritsky — Odessa National Maritime Academy, Odesа, Ukraine
• Main Authors: Zavadsky, V. A., Lenkov, S. V., Lukomsky, D. V., Mokritsky, V. A.
• Format: Article
• Language: English
• Published: PE "Politekhperiodika", Book and Journal Publishers 2002
• Subjects: GaAs; эпитаксиальные слои; облучение быстрыми нейтронами; подвижность носителей заряда
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.07
• Journal Title: Technology and design in electronic equipment

The paper demonstrates the possibility of controlling the parameters of gallium arsenide epitaxial layers using radiation treatment with fast neutrons. From a technological perspective, neutron irradiation is proposed to be divided into two types depending on the radiation dose. The first one (radia...