Електрофізичні та фотоелектричні характеристики трьохбар'єрної фотодіодної GaAs-структури
The work is devoted to the study of physical features of electronic processes taking place in the space charge region and in the base region of arsenide-gallium three-barrier photodiode structures with the effect of locking two adjacent transitions. The structures have high photosensitivity in the «...
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| Date: | 2018 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2018
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2018.4.21 |
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| Journal Title: | Technology and design in electronic equipment |