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Дослідження електричних та магнітних характеристик високотемпературних датчиків Холла на основі гетероструктури AlGaN/GaN

The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active l...

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Bibliographic Details
Date:2017
Main Authors: Stempitsky, V. R., Dao, Dinh Ha
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2017
Subjects:
високотемпературний датчик Холла
гетероструктури AlGaN/GaN
комп'ютерне моделювання
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2017.1-2.28
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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