Дослідження електричних та магнітних характеристик високотемпературних датчиків Холла на основі гетероструктури AlGaN/GaN
The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active l...
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| Date: | 2017 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2017
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2017.1-2.28 |
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| Journal Title: | Technology and design in electronic equipment |