Повышение радиационной устойчивости кремниевых монокристаллических эпитаксиальных слоев
The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109–1012 m–2. Such networks are created before the epitaxial layer is applied on the front sur...
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| Date: | 2014 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2014
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.5-6.57 |
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| Journal Title: | Technology and design in electronic equipment |