Особливості застосування листової термоміграції трирозмірної рідкої зони Al+Si для формування напівпровідникових силових приладів
The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base, which are surrounded by p+-Si*&n...
Gespeichert in:
| Datum: | 2023 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2023
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2023.1-2.34 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Zusammenfassung: | The paper considers using the technology of sheet thermomigration of three-dimensional zones, which implements p+-Si* liquid epitaxy on an n-Si wafer, to produce power semiconductor devices with crystals having thinned layers of high-resistive n-Si base, which are surrounded by p+-Si* side insulation regions, and thickened p+-Si* emitter layers. This technology, which has a number of advantages, was used to create diode arrays in n-Si with a specific resistance of 20 Ω·cm. For recrystallization, p+-Si* wafers with a resistivity of 0.005 Ω·cm were used. The produced direct polarity diodes had a breakdown voltage of 1000 V, a forward voltage drop of 1.17 V at a current density of 2.0 A/mm2, and a reverse resistance recovery time of trr = 1.5 μs. Additional use of the technology of creation of recombination centers allowed to further improve trr to 0.5 μs. |
|---|