Термоміграція довільно орієнтованих рідких лінійних зон Al-Si крізь пластини кремнію (110)
The paper analyzes the reasons and factors that allow avoiding faceting of non-oriented linear zones. It is shown that in the manufacture of semiconductor chips with a large perimeter and a reverse voltage of 2000 V, the conditions sine qua non to create isolating walls on silicon wafers with an ori...
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| Date: | 2021 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2021
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2021.5-6.33 |
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| Journal Title: | Technology and design in electronic equipment |