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Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры

The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtaine...

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Bibliographic Details
Date:2008
Main Authors: Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., Saidova, R. A.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2008
Subjects:
двухбазовая структура
токоперенос
фотовольтаический
примесный
слой объемного заряда
изотипный гетеропереход
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.46
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtained structures are of interest as noiseless photodetectors for opto- and microelectronics.

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