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Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры

The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtaine...

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Bibliographic Details
Date:	2008
Main Authors:	Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., Saidova, R. A.
Format:	Article
Language:	Ukrainian
Published:	PE "Politekhperiodika", Book and Journal Publishers 2008
Subjects:	двухбазовая структура токоперенос фотовольтаический примесный слой объемного заряда изотипный гетеропереход
Online Access:	https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.46
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Journal Title:	Technology and design in electronic equipment

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Technology and design in electronic equipment

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