Гетеропереход на основе кристалла FeIn₂Se₄, полученного методом Бриджмена

• Datum: 2007
• Hauptverfasser: Kovalyuk, Z. D., Katerynchuk, V. M., Netyaga, V. V., Zaslonkin, V. A.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2007
• Schlagworte: FeIn₂Se₄; InSe; гетеропереход; фотоэлектрические параметры
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.43
• Назва журналу: Technology and design in electronic equipment

FeIn2Se4 crystals with a layered structure and magnetic component were grown by the Bridgman method. Heterojunctions of type n-InSe–p-FeIn₂Se₄ were fabricated. From the capacitance–voltage characteristics, the potential barrier height of the heterojunctions was determined. Current–voltage character...